Kunihiro Arai - Concepedia

Author

Kunihiro Arai

NTT Basic Research Laboratories

Also Known As

K. Arai, Kiichiro Arai, Kunihiro ARAI, Kunihiro Arai

Publications

Citations

H-Index

Concepts

All Affiliations

NTT Basic Research Laboratories NTT (Japan)NTT (United States)

About

Kunihiro Arai is an author at NTT Basic Research Laboratories specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	765
2	Applied Physics	13	16	734
3	Electrical Engineering	11	13	572
4	Materials Engineering	2	2	162
5	Materials Science	2	2	162

Kunihiro Arai

Publications

824

Citations

H-Index

Page 1

	Year	Citations
High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies K.J. Chen, T. Enoki, K. Maezawa, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringPt-inalas ReactionEngineering	1996	133
Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel Tatsushi Akazaki, Kunihiro Arai, T. Enoki, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringIngaas Channel	1992	115
Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors I. Subband Structure of InSb Yasutami Takada, Kunihiro Arai, Naoyuki Uchimura, Journal of the Physical Society of Japan SemiconductorsSpintronicsN-channel Inversion LayersIi-vi SemiconductorEngineering	1980	83
Design and characteristics of InGaAs/InP composite-channel HFET's T. Enoki, Kunihiro Arai, A. Kohzen, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh-speed Electronics	1995	73
Delay time analysis for 0.4- to 5- mu m-gate InAlAs-InGaAs HEMTs T. Enoki, Kunihiro Arai, Y. Ishii IEEE Electron Device Letters Inalas-ingaas HemtsElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	1990	53
Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure by inserting a strained InAs quantum well Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Applied Physics Letters Wide-bandgap SemiconductorIngaas ChannelEngineeringPhysicsNanoelectronics	1994	50
InGaAs/InP double channel HEMT on InP T. Enoki, Kunihiro Arai, A. Kohzen, Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics	2003	38
Time-of-flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure Naoteru Shigekawa, Tomofumi Furuta, Kunihiro Arai Applied Physics Letters Wide-bandgap SemiconductorEngineeringTime-of-flight MeasurementElectron DiffractionElectron Velocity	1990	36
Effect of Growth Temperature on Si MBE Film Michiharu Tabe, Kunihiro Arai, Hiroaki Nakamura Japanese Journal of Applied Physics Materials EngineeringSemiconductorsMaterials ScienceSi FilmsEngineering	1981	29
A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas Kunishige Oe, Makoto Hirano, Kunihiro Arai, Japanese Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	1985	28

Page 1