Kunihiro Arai

High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies

K.J. Chen, T. Enoki, K. Maezawa et al. · IEEE Transactions on Electron Devices · 1996 · 133 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel

Tatsushi Akazaki, Kunihiro Arai, T. Enoki et al. · IEEE Electron Device Letters · 1992 · 115 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11

Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors I. Subband Structure of InSb

Yasutami Takada, Kunihiro Arai, Naoyuki Uchimura et al. · Journal of the Physical Society of Japan · 1980 · 83 citations

Semiconductors, Spintronics, N-channel Inversion Layers +14

Design and characteristics of InGaAs/InP composite-channel HFET's

T. Enoki, Kunihiro Arai, A. Kohzen et al. · IEEE Transactions on Electron Devices · 1995 · 73 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +14

Delay time analysis for 0.4- to 5- mu m-gate InAlAs-InGaAs HEMTs

T. Enoki, Kunihiro Arai, Y. Ishii · IEEE Electron Device Letters · 1990 · 53 citations

Inalas-ingaas Hemts, Electrical Engineering, Engineering +10