Concepedia

Y. Ishii

YI

Statistics

Publications

43

Citations

1.7K

H-Index

25

Active since

1983

Affiliations

NTT (Japan)(Current)

NTT Basic Research Laboratories

NTT (United States)

Y. Ishii is an author at NTT (Japan) specializing in electrical engineering, engineering, and semiconductor devices.

Publications per year

1983–2006

43

Publications

43

Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistor

Shintaro Miyazawa, Y. Ishii, Satoru Ishida et al. · Applied Physics Letters · 1983 · 136 citations

Engineering, Electrical Engineering, Materials Science +17

0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

T. Enoki, Masaaki Tomizawa, Yohtaro Umeda et al. · Japanese Journal of Applied Physics · 1994 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

Tetsuya Suemitsu, T. Enoki, Nobuyuki Sano et al. · IEEE Transactions on Electron Devices · 1998 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel

Tatsushi Akazaki, Kunihiro Arai, T. Enoki et al. · IEEE Electron Device Letters · 1992 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Design and characteristics of InGaAs/InP composite-channel HFET's

T. Enoki, Kunihiro Arai, A. Kohzen et al. · IEEE Transactions on Electron Devices · 1995 · 73 citations

Engineering, Electrical Engineering, Physics +17

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