Japanese Journal of Applied Physics · 1994 · 117 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsSemiconductor PhysicsSemiconductor Thin FilmsShort-channel EffectsCarrier ConfinementChannel EngineeringCurrent GainCutoff FrequencyGate Dielectric EngineeringGate Oxide Thickness EffectsHeterostructure DevicesHigh-electron-mobility Transistors
In this paper, we discusse the advantages of thinning the channel on short-channel effects for lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with sub-0.1-µm-long gates with regard to the performance of a 0.05-µm-gate device. To fabricate a sub-0.1-µm gate, the opening shape of the gate-footprint is controlled by using a bilayer dielectric film system and RIE side etching. The device shows a current gain cutoff frequency of 300 GHz and g m / g d ratio of 15. Thinning the channel and the barrier down to 100 Å improves carrier confinement and subthreshold characteristics and is indispensable for reducing the short-channel effects in the sub-0.1-µm-gate-length region.
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A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
K.H.G. Duh, P.C. Chao, S.M.J. Liu et al. · IEEE Microwave and Guided Wave Letters · 1991 · 135 citations