0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

Abstract

In this paper, we discusse the advantages of thinning the channel on short-channel effects for lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with sub-0.1-µm-long gates with regard to the performance of a 0.05-µm-gate device. To fabricate a sub-0.1-µm gate, the opening shape of the gate-footprint is controlled by using a bilayer dielectric film system and RIE side etching. The device shows a current gain cutoff frequency of 300 GHz and g m / g d ratio of 15. Thinning the channel and the barrier down to 100 Å improves carrier confinement and subthreshold characteristics and is indispensable for reducing the short-channel effects in the sub-0.1-µm-gate-length region.