Concepedia

Masaaki Tomizawa

MT

Statistics

Publications

13

Citations

456

H-Index

11

Active since

1982

Affiliations

NTT Basic Research Laboratories(Current)

NTT (Japan)

NTT (United States)

Masaaki Tomizawa is an author at NTT Basic Research Laboratories specializing in semiconductor devices, engineering, and semiconductor physics.

Publications per year

1982–2001

13

Publications

13

0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

T. Enoki, Masaaki Tomizawa, Yohtaro Umeda et al. · Japanese Journal of Applied Physics · 1994 · 117 citations

, , +17

Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors

Narihiko Maeda, Toshio Nishida, Naoki Kobayashi et al. · Applied Physics Letters · 1998 · 90 citations

, , +17

Electron transport and impact ionization in Si

Nobuyuki Sano, Takahiro Aoki, Masaaki Tomizawa et al. · Physical review. B, Condensed matter · 1990 · 65 citations

, , +14

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Nobuyuki Sano, Masaaki Tomizawa · Applied Physics Letters · 2001 · 34 citations · Full text

, , +17

Physical basis and limitation of universal mobility behavior in fully depleted silicon-on-insulator Si inversion layers

Masanari Shoji, Yasuhisa Ōmura, Masaaki Tomizawa · Journal of Applied Physics · 1997 · 27 citations · Full text

, , +17

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