Masaaki Tomizawa

0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

T. Enoki, Masaaki Tomizawa, Yohtaro Umeda et al. · Japanese Journal of Applied Physics · 1994 · 117 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors

Narihiko Maeda, Toshio Nishida, Naoki Kobayashi et al. · Applied Physics Letters · 1998 · 90 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Electron transport and impact ionization in Si

Nobuyuki Sano, Takahiro Aoki, Masaaki Tomizawa et al. · Physical review. B, Condensed matter · 1990 · 65 citations

Ion Implantation, Crystalline Si, Engineering +13

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Nobuyuki Sano, Masaaki Tomizawa · Applied Physics Letters · 2001 · 34 citations · Full text

Device Modeling, Semiconductors, Electrical Engineering +15

Physical basis and limitation of universal mobility behavior in fully depleted silicon-on-insulator Si inversion layers

Masanari Shoji, Yasuhisa Ōmura, Masaaki Tomizawa · Journal of Applied Physics · 1997 · 27 citations · Full text

Semiconductors, Electron Density, Electrical Engineering +14