Masanari Shoji

Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers

Masanari Shoji, S. Horiguchi · Journal of Applied Physics · 1999 · 123 citations

Semiconductors, Semiconductor Technology, Phonon-limited Electron Mobility +15

Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Masanari Shoji, S. Horiguchi · Journal of Applied Physics · 1997 · 28 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Physical basis and limitation of universal mobility behavior in fully depleted silicon-on-insulator Si inversion layers

Masanari Shoji, Yasuhisa Ōmura, Masaaki Tomizawa · Journal of Applied Physics · 1997 · 27 citations · Full text

Semiconductors, Electron Density, Electrical Engineering +14

Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

Yasuyuki Nakajima, S. Horiguchi, Masanari Shoji et al. · Journal of Applied Physics · 1998 · 14 citations

Device Modeling, Electrical Engineering, Gate Capacitance +11