A. Kohzen

Design and characteristics of InGaAs/InP composite-channel HFET's

T. Enoki, Kunihiro Arai, A. Kohzen et al. · IEEE Transactions on Electron Devices · 1995 · 73 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +14

10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs

Y. Akahori, Y. Akatsu, A. Kohzen et al. · IEEE Photonics Technology Letters · 1992 · 43 citations

Engineering, Device Integration, 10-Gb/s High-speed +18

InGaAs/InP double channel HEMT on InP

T. Enoki, Kunihiro Arai, A. Kohzen et al. · 2003 · 38 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11

A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifier

N. Uchida, Y. Akahori, M. Ikeda et al. · IEEE Photonics Technology Letters · 1991 · 26 citations

Optical Materials, Engineering, Optoelectronic Devices +18

11 GHz ultrawide-bandwidth monolithic photoreceiverusing InGaAs <i>pin</i> PD and InAlAs/InGaAs HEMTs

Y. Akahori, M. Ikeda, A. Kohzen et al. · Electronics Letters · 1994 · 25 citations