Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors I. Subband Structure of InSb

Abstract

The subband structure of n -channel inversion layers on InSb its calculated self-consistently in the Hartree approximation. A new method of the effective-mass approach for the nonparabolic band is presented. The splitting, of the spin states caused by the surface potential is calculated to be small and the resonance effect with the hole state in the bulk is found to be very small. The calculated effective masses of the occupied subbands at the Fermi level agree quite well with those measured by Daerr et al. for a wide range of the carrier concentration.