M. Tabe

Fabrication technique for Si single-electron transistoroperating at room temperature

Yasuo Takahashi, Masao Nagase, H. Namatsu et al. · Electronics Letters · 1995 · 335 citations

Engineering, Electrical Engineering, Materials Science +17

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

Yasuhisa Ōmura, S. Horiguchi, M. Tabe et al. · IEEE Electron Device Letters · 1993 · 275 citations

Engineering, Electrical Engineering, Physics +13

Initial stage of thermal oxidation of the Si(111)-(7×7) surface

M. Tabe, T. T. Chiang, I. Lindau et al. · Physical review. B, Condensed matter · 1986 · 119 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties

Yasuyuki Nakajima, Yoshiro Takahashi, S. Horiguchi et al. · Applied Physics Letters · 1994 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7×7 surfaces

Y. Ono, M. Tabe, Hiroyuki Kageshima · Physical review. B, Condensed matter · 1993 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17