H. Namatsu

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Yasuo Takahashi, H. Namatsu, K. Kurihara et al. · IEEE Transactions on Electron Devices · 1996 · 194 citations

Device Modeling, Electrical Engineering, Si Wire +12

Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

H. Namatsu, Toru Yamaguchi, Masao Nagase et al. · Microelectronic Engineering · 1998 · 156 citations

Engineering, Electronic Materials, Physics +13

Fabrication method for IC-oriented Si single-electron transistors

Y. Ono, Yasuo Takahashi, Kenji Yamazaki et al. · IEEE Transactions on Electron Devices · 2000 · 97 citations

Electrical Engineering, Si Wire, Engineering +11

Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane

Satoshi� Matsui, Y. Igaku, H. Ishigaki et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 90 citations

Engineering, Pattern Transfer, Biomedical Engineering +19

Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties

Yasuyuki Nakajima, Yoshiro Takahashi, S. Horiguchi et al. · Applied Physics Letters · 1994 · 71 citations

Engineering, Silicon On Insulator, Interconnect (Integrated Circuits) +16