Masao Nagase

Microscopic thickness determination of thin graphite films formed on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>SiC</mml:mi></mml:mrow></mml:math>from quantized oscillation in reflectivity of low-energy electrons

Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda et al. · Physical Review B · 2008 · 362 citations · Full text

Natural Sciences, Materials Science, Physics +11

Fabrication technique for Si single-electron transistoroperating at room temperature

Yasuo Takahashi, Masao Nagase, H. Namatsu et al. · Electronics Letters · 1995 · 335 citations

Engineering, Electrical Engineering, Materials Science +17

Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations

Hideo Namatsu, Yasuo Takahashi, Kenji Yamazaki et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 286 citations

Engineering, Materials Engineering, Materials Science +11

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Yasuo Takahashi, H. Namatsu, K. Kurihara et al. · IEEE Transactions on Electron Devices · 1996 · 195 citations

Engineering, Electrical Engineering, Materials Science +17

Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

H. Namatsu, Toru Yamaguchi, Masao Nagase et al. · Microelectronic Engineering · 1998 · 156 citations

Natural Sciences, Materials Engineering, Materials Science +8