Fumihiko Maeda - Concepedia

Author

Fumihiko Maeda

NTT Basic Research Laboratories ORCID

Also Known As

F MAEDA, F Maeda, F. MAEDA, F. Maeda, Fumihiko MAEDA, Fumihiko Maeda, Fumihiko Maeda Fumihiko Maeda

132

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

NTT Basic Research Laboratories Tohoku University NTT (Japan)Japan Synchrotron Radiation Research Institute

About

Fumihiko Maeda is an author at NTT Basic Research Laboratories specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	40	2K
2	Applied Physics	20	36	1.9K
3	Chemistry	11	11	502
4	Natural Sciences	10	11	872
5	Chemical Engineering	5	5	101

Fumihiko Maeda

Publications

Citations

H-Index

Page 1

	Year	Citations
Microscopic thickness determination of thin graphite films formed on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>SiC</mml:mi></mml:mrow></mml:math>from quantized oscillation in reflectivity of low-energy electrons Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda, Physical Review B Thin Film PhysicsEngineeringMicroscopic Thickness DeterminationThin Film Process TechnologySemiconductors	2008	359
Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy Hiroki Hibino, Hiroyuki Kageshima, Masato Kotsugi, Physical Review B Materials ScienceGraphene NanomeshesGraphene Quantum DotEngineeringEpitaxial Few-layer Graphene	2009	276
Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces K. Prabhakaran, Fumihiko Maeda, Yasushi Watanabe, Applied Physics Letters EngineeringThermal Decomposition PathwayChemistrySilicon On InsulatorSemiconductor Nanostructures	2000	252
Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference K. Prabhakaran, Fumihiko Maeda, Yasushi Watanabe, Thin Solid Films Materials ScienceMaterials EngineeringDistinct DifferenceEngineeringOxide Electronics	2000	105
Surface and bulk core-level shifts of the Si(111)<i>√3 √3</i>-Ag surface: Evidence for a charged<i>√3 √3</i>layer S. Kono, K. Higashiyama, T. Kinoshita, Physical Review Letters Materials ScienceSurface CharacterizationIi-vi SemiconductorSi 2PSurface Si 2P	1987	100
Unoccupied-electronic-band structure of graphite studied by angle-resolved secondary-electron emission and inverse photoemission Fumihiko Maeda, T. Takahashi, H. Ohsawa, Physical review. B, Condensed matter Angle-resolved Secondary-electron EmissionEngineeringElectron DiffractionInverse PhotoemissionElectronic Structure	1988	87
Electronic structure of single-walled carbon nanotubes encapsulating potassium Satoru Suzuki, Fumihiko Maeda, Yoshio Watanabe, Physical review. B, Condensed matter NanosheetEngineeringCarbon NanotechnologyExcitation Energy TransferChemistry	2003	59
Electronic and surface properties of H-terminated diamond surface affected by NO2 gas M. Kubovič, Makoto Kasu, Hiroyuki Kageshima, Diamond and Related Materials Materials ScienceSurface CharacterizationDiamond-like CarbonEngineeringNo2 Gas	2010	55
X-ray standing-wave study of an Sb-terminated GaAs(001)-(2×4) surface Munehiro Sugiyama, Satoshi Maeyama, Fumihiko Maeda, Physical review. B, Condensed matter Materials ScienceWide-bandgap SemiconductorIi-vi SemiconductorSb-sb DimerEngineering	1995	53
Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy Hiroki Hibino, Hiroyuki Kageshima, Fumihiko Maeda, e-Journal of Surface Science and Nanotechnology Materials ScienceGraphene NanomeshesElectrical EngineeringGraphene Quantum DotEngineering	2008	51

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