T. Ouisse

Ultimately thin double-gate SOI MOSFETs

T. Ernst, S. Cristoloveanu, G. Ghibaudo et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Device Modeling, Electrical Engineering, Engineering +9

Variable range hopping and thermally activated transport in molybdenum-based MXenes

Joseph Halim, Eun Ju Moon, Per Eklund et al. · Physical review. B./Physical review. B · 2018 · 102 citations · Full text

Thin Film Physics, Magnetic Properties, Engineering +21

Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

T. Ouisse, S. Cristoloveanu, T. Elewa et al. · IEEE Transactions on Electron Devices · 1991 · 92 citations

Engineering, Semiconductor Materials, Silicon On Insulator +18

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Camilla Coletti, Stiven Forti, Alessandro Principi et al. · Physical Review B · 2013 · 83 citations · Full text

Engineering, Angle-resolved Photoemission Study, Graphene Nanomeshes +18

Imaging and controlling electron transport inside a quantum ring

B. Hackens, Frederico Martins, T. Ouisse et al. · Nature Physics · 2006 · 75 citations · Full text

Quantum Science, Engineering, Physics +3