Katsumi Murase

Ultimately thin double-gate SOI MOSFETs

T. Ernst, S. Cristoloveanu, G. Ghibaudo et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Device Modeling, Electrical Engineering, Engineering +9

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Yasuo Takahashi, H. Namatsu, K. Kurihara et al. · IEEE Transactions on Electron Devices · 1996 · 194 citations

Device Modeling, Electrical Engineering, Si Wire +12

Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water

Hideo Namatsu, Kenji Kurihara, Masao Nagase et al. · Applied Physics Letters · 1995 · 123 citations

Dimensional Limitations, Engineering, Mechanical Engineering +16

Multigate single-electron transistors and their application to an exclusive-OR gate

Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki et al. · Applied Physics Letters · 2000 · 101 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Fabrication method for IC-oriented Si single-electron transistors

Y. Ono, Yasuo Takahashi, Kenji Yamazaki et al. · IEEE Transactions on Electron Devices · 2000 · 97 citations

Electrical Engineering, Si Wire, Engineering +11