Katsumi Murase - Concepedia

Author

Katsumi Murase

NTT Basic Research Laboratories

Also Known As

K Murase, K. Kurihara, K. Murase, KATSUMI MURASE, Katsumi MURASE, Katsumi Murase, Katsumi Murase Katsumi Murase

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

NTT Basic Research Laboratories NTT (Japan)

About

Katsumi Murase is an author at NTT Basic Research Laboratories specializing in engineering, applied physics, and nanoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	43	2K
2	Applied Physics	24	41	1.9K
3	Chemical Engineering	2	2	32
4	Chemistry	2	2	53
5	Medicine	1	1	53

Katsumi Murase

Publications

Citations

H-Index

Page 1

	Year	Citations
Ultimately thin double-gate SOI MOSFETs T. Ernst, S. Cristoloveanu, G. Ghibaudo, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringBuried OxidePhysics	2003	244
Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates Yasuo Takahashi, H. Namatsu, K. Kurihara, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSi WireEngineeringNanoelectronics	1996	194
Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water Hideo Namatsu, Kenji Kurihara, Masao Nagase, Applied Physics Letters Dimensional LimitationsEngineeringMechanical EngineeringWettingSilicon On Insulator	1995	123
Multigate single-electron transistors and their application to an exclusive-OR gate Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki, Applied Physics Letters Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied Physics	2000	101
Fabrication method for IC-oriented Si single-electron transistors Y. Ono, Yasuo Takahashi, Kenji Yamazaki, IEEE Transactions on Electron Devices Electrical EngineeringSi WireEngineeringVlsi DesignNanoelectronics	2000	97
Si complementary single-electron inverter with voltage gain Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Applied Physics Letters Tiny SetsElectrical EngineeringEngineeringIdentical Single-electron TransistorsNanoelectronics	2000	94
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation S. Horiguchi, Masao Nagase, Kenji Shiraishi, Japanese Journal of Applied Physics Electrical EngineeringEngineeringTunneling MicroscopyPhysicsNanoelectronics	2001	85
Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands Atsushi Fujiwara, Yasuo Takahashi, Katsumi Murase, Applied Physics Letters Electrical EngineeringEngineeringTunneling MicroscopyPhysicsNanoelectronics	1995	59
Fabrication of sub-10-nm silicon lines with minimum fluctuation H. Namatsu, Masao Nagase, K. Kurihara, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Minimum FluctuationEngineeringHigh ResolutionOptoelectronic DevicesIntegrated Circuits	1995	57
An Electron Beam Nanolithography System and its Application to Si Nanofabrication Kenji Kurihara, K. Iwadate, Hideo Namatsu, Japanese Journal of Applied Physics EngineeringElectron-beam LithographySi NanowiresOptoelectronic DevicesIntegrated Circuits	1995	55

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