F. Balestra

Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

G. Ghibaudo, O. Roux, Ch. Nguyen-Duc et al. · physica status solidi (a) · 1991 · 759 citations

Engineering, Electrical Engineering, Circuit Theory +16

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra, S. Cristoloveanu, M. Benachir et al. · IEEE Electron Device Letters · 1987 · 750 citations

Engineering, Electrical Engineering, Materials Science +17

Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

F. Balestra, M. Benachir, J. Brini et al. · IEEE Transactions on Electron Devices · 1990 · 121 citations

Engineering, Electrical Engineering, Microelectronics +16

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Xu Yong, R. Gwoziecki, Isabelle Chartier et al. · Applied Physics Letters · 2010 · 109 citations

Engineering, Electrical Engineering, Microelectronics +14

Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperatures

F. Balestra, L. Audaire, C. Lucas · Solid-State Electronics · 1987 · 101 citations

Engineering, Electrical Engineering, Materials Science +16