Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperatures

Physics of Semiconductor Devices

Materials Today · 2003 · 512 citations · Full text

Engineering, Electrical Engineering, Physics +12

Influence of the floating substrate potential on the characteristics of ESFI MOS transistors

J. Tihanyi, H. Schlötterer · Solid-State Electronics · 1975 · 83 citations

Engineering, Electrical Engineering, Materials Science +12

Time dependence of depletion region formation in phosphorus-doped silicon MOS devices at cryogenic temperatures

N. S. Saks, A. Nordbryhn · Journal of Applied Physics · 1979 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Substrate Current due to Impact Ionization in MOS-FET

T. Kamata, Kyozi Tanabashi, Keizo Kobayashi · Japanese Journal of Applied Physics · 1976 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Transient response of <i>n</i>-channel metal-oxide-semiconductor field-effect transistors during turnon at 10–25 °K

Stuart K. Tewksbury · Journal of Applied Physics · 1982 · 38 citations

Engineering, Electrical Engineering, Microelectronics +16