J. Tihanyi

A new generation of high voltage MOSFETs breaks the limit line of silicon

Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 398 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Properties of ESFI MOS transistors due to the floating substrate and the finite volume

J. Tihanyi, H. Schlötterer · IEEE Transactions on Electron Devices · 1975 · 134 citations

Device Modeling, Electrical Engineering, Semiconductor Device +15

Influence of the floating substrate potential on the characteristics of ESFI MOS transistors

J. Tihanyi, H. Schlötterer · Solid-State Electronics · 1975 · 83 citations

Electrical Engineering, Engineering, Esfi Mos Transistors +6

Functional integration of power MOS and bipolar devices

J. Tihanyi · 1980 · 22 citations

Electrical Engineering, Bipolar Devices, Siemens Power Mos +9

Observation of surface phenomena on semiconductor devices by a light spot scanning method

J. Tihanyi, Gy. Pásztor · Solid-State Electronics · 1967 · 20 citations

Semiconductors, Semiconductor Devices, Electrical Engineering +15