J. Brini - Concepedia

Author

J. Brini

Aristotle University of Thessaloniki

Also Known As

Brini J., J Brini, J. BRINI, J. Brini, JEAN BRINI, Jean Brini

122

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

Aristotle University of Thessaloniki Centre National de la Recherche Scientifique CEA Grenoble Epson Information Technology College Seiko Holdings (Japan)

About

J. Brini is an author at Aristotle University of Thessaloniki specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	45	2.9K
2	Applied Physics	23	44	2.9K
3	Electrical Engineering	23	41	2.8K
4	Materials Science	8	8	233
5	Materials Engineering	5	5	235

J. Brini

Publications

Citations

H-Index

Page 1

	Year	Citations
Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, physica status solidi (a) Device ModelingElectrical EngineeringEngineeringMos TransistorElectronic Engineering	1991	749
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance F. Balestra, S. Cristoloveanu, M. Benachir, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringNew DeviceNanoelectronics	1987	747
Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs F. Balestra, M. Benachir, J. Brini, IEEE Transactions on Electron Devices EngineeringStrong InversionIntegrated CircuitsSi Film DopingUltra-thin-film Soi Mosfets	1990	121
On-current modeling of large-grain polycrystalline silicon thin-film transistors Filippos Farmakis, J. Brini, G. Kamarinos, IEEE Transactions on Electron Devices Device ModelingMaterials EngineeringElectrical EngineeringPolysilicon FilmEngineering	2001	85
Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors Constantinos T. Angelis, C.A. Dimitriadis, M Miyasaka, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringPolysilicon FilmsEngineering	1999	84
On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs Pascal Le Masson, Jean‐Luc Autran, J. Brini IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringTunneling MicroscopyNanoelectronics	1999	81
Model for drain current RTS amplitude in small-area MOS transistors O. Buisson, G. Ghibaudo, J. Brini Solid-State Electronics Device ModelingElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	1992	74
Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements Constantinos T. Angelis, C.A. Dimitriadis, I. Samaras, Journal of Applied Physics Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityApplied Physics	1997	74
Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors Filippos Farmakis, J. Brini, G. Kamarinos, IEEE Electron Device Letters Electrical EngineeringHot-carrier StressEngineeringNanoelectronicsStress-induced Leakage Current	2001	72
Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors G. Ghibaudo, O. Roux-dit-Buisson, J. Brini physica status solidi (a) Silicon Mos TransistorsElectrical EngineeringEngineeringVlsi DesignPhysics	1992	71

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