J. Brini

Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

G. Ghibaudo, O. Roux, Ch. Nguyen-Duc et al. · physica status solidi (a) · 1991 · 749 citations

Device Modeling, Electrical Engineering, Engineering +9

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra, S. Cristoloveanu, M. Benachir et al. · IEEE Electron Device Letters · 1987 · 747 citations

Device Modeling, Electrical Engineering, Engineering +13

Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

F. Balestra, M. Benachir, J. Brini et al. · IEEE Transactions on Electron Devices · 1990 · 121 citations

Engineering, Strong Inversion, Integrated Circuits +18

On-current modeling of large-grain polycrystalline silicon thin-film transistors

Filippos Farmakis, J. Brini, G. Kamarinos et al. · IEEE Transactions on Electron Devices · 2001 · 85 citations

Device Modeling, Materials Engineering, Electrical Engineering +12

Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors

Constantinos T. Angelis, C.A. Dimitriadis, M Miyasaka et al. · Journal of Applied Physics · 1999 · 84 citations

Materials Science, Materials Engineering, Electrical Engineering +15