Concepedia

Electrostatic Integrity

Electrostatic Integrity is a metric in semiconductor device physics that quantifies the ability of a gate electrode to maintain full electrostatic control over the channel region in the presence of short-channel effects, thereby distinguishing it from other performance metrics by its specific focus on the gate's dominance over charge distribution and leakage mechanisms in scaled transistors.

66

Publications

2.7K

Citations

255

Authors

82

Institutions

Publications per year

2017–2026

17

Parents

Publications

66

Statistical variability and reliability in nanoscale FinFETs

Xingsheng Wang, A. R. Brown, B. Cheng et al. · 2011 · 274 citations

, , +16

Screening and interlayer coupling in multilayer MoS<sub>2</sub>

Saptarshi Das, Joerg Appenzeller · physica status solidi (RRL) - Rapid Research Letters · 2013 · 166 citations

, , +17

Is negative capacitance FET a steep-slope logic switch?

Wei Cao, Kaustav Banerjee · Nature Communications · 2020 · 158 citations · Full text

, , +17

Enhanced Electrostatic Integrity of Short-Channel Junctionless Transistor With High- $\kappa$ Spacers

Suresh Gundapaneni, Swaroop Ganguly, Anil Kottantharayil · IEEE Electron Device Letters · 2011 · 145 citations

, , +15

New structure transistors for advanced technology node CMOS ICs

Qingzhu Zhang, Yongkui Zhang, Yan-Na Luo et al. · National Science Review · 2024 · 139 citations · Full text

, , +17

1–5 of 66

Authors

255

  1. PS
    Pin Su

    National Yang Ming Chiao Tung University, Taiwan

    6 publications · 120 citations

    6

    h-index

  2. TK
    Tsu‐Jae King Liu

    University of California, Berkeley, United States

    5 publications · 131 citations

    5

    h-index

  3. VP
    Vita Pi‐Ho Hu

    National Yang Ming Chiao Tung University, Taiwan

    4 publications · 59 citations

    4

    h-index

  4. DC
    Daniel Connelly

    Acorn, United States

    4 publications · 117 citations

    4

    h-index

  5. SD
    Sudeb Dasgupta

    Indian Institute of Technology Roorkee, India

    4 publications · 180 citations

    4

    h-index

1–5 of 255

Institutions

82

  1. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    8 h-index

    27 publications

    508 citations

  2. University of California, Berkeley

    Berkeley, United States

    5 h-index

    17 publications

    485 citations

  3. Indian Institute of Technology Roorkee

    Roorkee, India

    4 h-index

    12 publications

    540 citations

  4. Institute of Microelectronics

    Beijing, China

    4 h-index

    15 publications

    844 citations

  5. Purdue University West Lafayette

    West Lafayette, United States

    4 h-index

    15 publications

    653 citations

  6. IBM (United States)

    Armonk, United States

    4 h-index

    13 publications

    402 citations

  7. University of Glasgow

    Glasgow, United Kingdom

    3 h-index

    10 publications

    1.3K citations

  8. Chinese Academy of Sciences

    Beijing, China

    3 h-index

    12 publications

    730 citations

1–8 of 82

Venues

  1. IEEE Transactions on Electron Devices

    11 publications · 479 citations

    11

    h-index

  2. IEEE Transactions on Nanotechnology

    5 publications · 147 citations

    5

    h-index

  3. IEEE Journal of the Electron Devices Society

    3 publications · 91 citations

    3

    h-index

  4. IEEE Electron Device Letters

    3 publications · 237 citations

    3

    h-index

  5. Scientific Reports

    2 publications · 89 citations

    2

    h-index

1–5