Yongkui Zhang - Concepedia

Author

Yongkui Zhang

Chinese Academy of Sciences ORCID

Also Known As

Anyan Du, H. L. Zhu, Qiuxia Xu, X. Z. Ai, Y K Zhang, Y. K. Zhang, Y. Zhang, Yangwen ZHANG, Yangwen Zhang, Yiqi Zhang

114

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences University of Science and Technology of China Beijing Academy of Science and Technology

About

Yongkui Zhang is an author at Chinese Academy of Sciences specializing in engineering, applied physics, and nanoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	501
2	Applied Physics	12	13	490
3	Medicine	2	2	35
4	Chemical Engineering	2	2	158
5	Biochemistry	1	1	24

Yongkui Zhang

Publications

878

Citations

H-Index

Page 1

	Year	Citations
Antimony Nanowire Arrays Fabricated by Pulsed Electrodeposition in Anodic Alumina Membranes Yongkui Zhang, Guozhu Li, Yucheng Wu, Advanced Materials EngineeringAnodic Alumina MembranesMetallic NanomaterialsAnodizingPulsed Electrodeposition	2002	147
New structure transistors for advanced technology node CMOS ICs Qingzhu Zhang, Yongkui Zhang, Yan-Na Luo, National Science Review	2024	98
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Nanomaterials	2024	86
FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Zhaohao Zhang, Gaobo Xu, Qingzhu Zhang, IEEE Electron Device Letters Materials ScienceElectrical EngineeringMagnetic PropertiesHafnium Zirconium OxidesEngineering	2019	78
FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin Qingzhu Zhang, Huaxiang Yin, Jun Luo, EngineeringSilicon On InsulatorInterconnect (Integrated Circuits)Semiconductor DeviceNanoelectronics	2016	43
First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates Chen Li, Huilong Zhu, Yongkui Zhang, Nano Letters Novel N-type Nanowire/nanosheetElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	2021	38
Vertical Sandwich GAA FETs With Self-Aligned High-<i>k</i> Metal Gate Made by Quasi Atomic Layer Etching Process Yongkui Zhang, Xuezheng Ai, Xiaogen Yin, IEEE Transactions on Electron Devices EngineeringNanodevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2021	29
Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors Weixing Huang, Huilong Zhu, Zhenhua Wu, IEEE Journal of the Electron Devices Society Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNegative Dibl	2020	25
Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window Weixing Huang, Huilong Zhu, Yongkui Zhang, IEEE Electron Device Letters EngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryChannel DiameterIntegrated Circuits	2021	25
Correlation free-solution capillary electrophoresis migration times of small peptides with physicochemical properties N. Chen, Lei Wang, Yongkui Zhang Chromatographia Capillary ElectrophoresisBiochemistryPeptide LibraryPeptide EngineeringBioanalysis	1993	24

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