Xiaogen Yin - Concepedia

Author

Xiaogen Yin

Institute of Microelectronics ORCID

Also Known As

Chen Li, Xiaogen Yin, Yin, Xiaogen

Publications

409

Citations

H-Index

Concepts

All Affiliations

Institute of Microelectronics University of Chinese Academy of Sciences Chinese Academy of Sciences University of Science and Technology of China Mid Sweden University

About

Xiaogen Yin is an author at Institute of Microelectronics specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	249
2	Applied Physics	8	8	249
3	Electrical Engineering	8	8	249
4	Materials Science	1	1	29
5	Physics	1	1	14

Xiaogen Yin

Publications

321

Citations

H-Index

Page 1

	Year	Citations
Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation Xiaogen Yin IEEE Electron Device Letters Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2019	77
First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates Chen Li, Huilong Zhu, Yongkui Zhang, Nano Letters Novel N-type Nanowire/nanosheetElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	2021	38
Study of selective isotropic etching Si1−xGex in process of nanowire transistors Junjie Li, Yongliang Li, N. Zhou, Journal of Materials Science Materials in Electronics Materials ScienceNanowire TransistorsElectrical EngineeringEngineeringMicrofabrication	2019	29
Vertical Sandwich GAA FETs With Self-Aligned High-<i>k</i> Metal Gate Made by Quasi Atomic Layer Etching Process Yongkui Zhang, Xuezheng Ai, Xiaogen Yin, IEEE Transactions on Electron Devices EngineeringNanodevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2021	29
Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors Weixing Huang, Huilong Zhu, Zhenhua Wu, IEEE Journal of the Electron Devices Society Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNegative Dibl	2020	25
Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window Weixing Huang, Huilong Zhu, Yongkui Zhang, IEEE Electron Device Letters EngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryChannel DiameterIntegrated Circuits	2021	25
Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si <sub>1−x</sub> Ge <sub>x</sub> Xiaogen Yin, Huilong Zhu, Liheng Zhao, ECS Journal of Solid State Science and Technology	2020	19
Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids Chen Li, Huilong Zhu, Yongkui Zhang, ACS Applied Materials & Interfaces	2020	16
Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS) Guilei Wang, Mohammadreza Kolahdouz, Jun Luo, Journal of Materials Science Materials in Electronics Electrical EngineeringSige LayersEngineeringPhysicsNanoelectronics	2019	14
Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits Weixing Huang, Huilong Zhu, Yongkui Zhang, Microelectronics Journal	2021	14

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