Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge · Nature · 2011 · 1K citations

Engineering, Electrical Engineering, Materials Science +13

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

Silicon-on-insulator 'gate-all-around device'

J.-P. Colinge, M.-H. Gao, A. Romano‐Rodrı́guez et al. · 2002 · 350 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires

Kyoung Hwan Yeo, Sung Dae Suk, Ming Li et al. · 2006 · 197 citations

Engineering, Electrical Engineering, Materials Science +17

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 161 citations

Engineering, Electrical Engineering, Materials Science +17