Concepedia

Body Effect

Body Effect is a short-channel effect in Metal-Oxide-Semiconductor Field-Effect Transistors characterized by the increase in threshold voltage due to the modulation of the channel potential by the source-to-body substrate voltage, distinguishing it from other voltage-dependent threshold phenomena through its dependence on the body bias.

311

Publications

10.9K

Citations

1.3K

Authors

319

Institutions

Publications per year

2017–2026

49

Variants

Back-gate EffectSubstrate Bias Effect

Parents

Publications

311

Analysis and Design Strategy of UHF Micro-Power CMOS Rectifiers for Micro-Sensor and RFID Applications

Jun Yi, Wing‐Hung Ki, Chi-Ying Tsui · IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications · 2007 · 321 citations

, , +16

Design tradeoffs between surface and buried-channel FET's

G.J. Hu, Richard H. Bruce · IEEE Transactions on Electron Devices · 1985 · 315 citations

, , +17

A Sub-1-V, 10 ppm/<formula formulatype="inline"> <tex>$^{\circ}$</tex></formula>C, Nanopower Voltage Reference Generator

Giovanni De Vita, Giuseppe Iannaccone · IEEE Journal of Solid-State Circuits · 2007 · 270 citations

, , +12

Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

Yang‐Kyu Choi, K. Asano, N. Lindert et al. · IEEE Electron Device Letters · 2000 · 238 citations

, , +17

Single-transistor latch in SOI MOSFETs

C.-D. Chen, M. Matloubian, R. Sundaresan et al. · IEEE Electron Device Letters · 1988 · 196 citations

, , +15

1–5 of 311

Authors

1.3K

  1. TH
    Toshiro Hiramoto

    The University of Tokyo, Japan

    8 publications · 178 citations

    8

    h-index

  2. SC
    S. Cristoloveanu

    Institut polytechnique de Grenoble, France

    6 publications · 214 citations

    6

    h-index

  3. MM
    M. Matloubian

    Conexant (United States), United States

    5 publications · 344 citations

    5

    h-index

  4. JF
    J.G. Fossum

    University of Florida, United States

    5 publications · 173 citations

    5

    h-index

  5. TK
    Tsu‐Jae King Liu

    University of California, Berkeley, United States

    5 publications · 203 citations

    5

    h-index

1–5 of 1.3K

Institutions

319

  1. University of California, Berkeley

    Berkeley, United States

    14 h-index

    59 publications

    3.5K citations

  2. Texas Instruments (United States)

    Dallas, United States

    13 h-index

    40 publications

    2K citations

  3. The University of Tokyo

    Tokyo, Japan

    11 h-index

    48 publications

    992 citations

  4. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    11 h-index

    30 publications

    634 citations

  5. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    10 h-index

    45 publications

    1.1K citations

  6. Samsung (South Korea)

    Seoul, South Korea

    10 h-index

    67 publications

    3.1K citations

  7. IBM (United States)

    Armonk, United States

    8 h-index

    32 publications

    1.3K citations

  8. Institut polytechnique de Grenoble

    Grenoble, France

    8 h-index

    18 publications

    656 citations

1–8 of 319

Venues

  1. IEEE Transactions on Electron Devices

    49 publications · 2.2K citations

    27

    h-index

  2. IEEE Electron Device Letters

    26 publications · 1.2K citations

    19

    h-index

  3. Japanese Journal of Applied Physics

    JJAP · 10 publications · 232 citations

    10

    h-index

  4. IEEE Journal of Solid-State Circuits

    7 publications · 620 citations

    7

    h-index

  5. 7

    h-index

1–5