IEEE Electron Device Letters · 2000 · 238 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ScalingIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsBody EffectGate Oxide InterfacesGate Oxide LeakageGate Oxide ScalingGate Oxide Thickness EffectsLeakageLeakage Current ReductionSeries Resistance
A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.
3
Short-channel effects in deep-submicrometer SOI MOSFETS
L.T. Su, J.B. Jacobs, J.E. Chung et al. · 2002 · 28 citations