N. Lindert

Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

Yang‐Kyu Choi, K. Asano, N. Lindert et al. · IEEE Electron Device Letters · 2000 · 238 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm/sub 2/ SRAM cell

C. Auth, S. Balakrishnan, M. Bost et al. · 2005 · 230 citations

Engineering, Computer Engineering, Electrical Engineering +17

Sub-20 nm CMOS FinFET technologies

Yang‐Kyu Choi, N. Lindert, Peiqi Xuan et al. · 2002 · 194 citations

Engineering, Electrical Engineering, Microelectronics +15

Sub-60-nm quasi-planar FinFETs fabricated using a simplified process

N. Lindert, L. Chang, Yang‐Kyu Choi et al. · IEEE Electron Device Letters · 2001 · 149 citations

Engineering, Electrical Engineering, Electronic Materials +13

FinFET-a quasi-planar double-gate MOSFET

Samuel Tang, L. Chang, N. Lindert et al. · 2002 · 108 citations

Engineering, Electrical Engineering, Microelectronics +12