Tsu-Jae King

FinFET scaling to 10 nm gate length

Bin Yu, Leland Chang, Safayet Ahmed et al. · 2003 · 595 citations

Engineering, Electrical Engineering, Microelectronics +15

Sub-50 nm P-channel FinFET

Xuejue Huang, Wen‐Chin Lee, C. Kuo et al. · IEEE Transactions on Electron Devices · 2001 · 283 citations

Engineering, Electrical Engineering, Electronic Materials +15

Extremely scaled silicon nano-CMOS devices

Leland Chang, Yang‐Kyu Choi, Daewon Ha et al. · Proceedings of the IEEE · 2003 · 280 citations

Engineering, Electrical Engineering, Materials Science +17

Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

Yang‐Kyu Choi, K. Asano, N. Lindert et al. · IEEE Electron Device Letters · 2000 · 238 citations

Engineering, Computer Engineering, Electrical Engineering +17

Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime

J. Kedzierski, Peng-Yao Xuan, Erik H. Anderson et al. · 2002 · 214 citations

Engineering, Electrical Engineering, Materials Science +17