R. Sundaresan - Concepedia

Author

R. Sundaresan

Texas Instruments (United States)

Also Known As

R. Sundaresan, R.S. Sundaresan, Ramya Kumar Sundaresan, Ravishankar Sundaresan

Publications

913

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)University of Florida Boeing (United States)

About

R. Sundaresan is an author at Texas Instruments (United States) specializing in applied physics, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	838
2	Applied Physics	14	16	838
3	Electrical Engineering	13	14	803
4	Computer Engineering	3	3	272
5	Materials Engineering	1	1	15

R. Sundaresan

Publications

838

Citations

H-Index

Page 1

	Year	Citations
Single-transistor latch in SOI MOSFETs C.-D. Chen, M. Matloubian, R. Sundaresan, IEEE Electron Device Letters Positive FeedbackElectrical EngineeringEngineeringSingle-transistor LatchStress-induced Leakage Current	1988	192
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon S.D.S. Malhi, H. Shichijo, S. Banerjee, IEEE Transactions on Electron Devices EngineeringVlsi DesignComputer ArchitectureCmos 64KSilicon On Insulator	1985	190
Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET's J.G. Fossum, R. Sundaresan, M. Matloubian IEEE Electron Device Letters Device ModelingHigh SlopesElectrical EngineeringN-channel Soi MosfetEngineering	1987	70
Hot-electron degradation of n-channel polysilicon MOSFETs S. Banerjee, R. Sundaresan, H. Shichijo, IEEE Transactions on Electron Devices Hydrogen PassivationElectrical EngineeringGrain BoundariesEngineeringHot-electron Degradation	1988	59
SOI design for competitive CMOS VLSI J.G. Fossum, J.-Y. Choi, R. Sundaresan IEEE Transactions on Electron Devices EngineeringVlsi DesignContemporary Bulk MosfetComputer ArchitectureIntegrated Circuits	1990	59
Potential improvement of polysilicon solar cells by grain boundary and intragrain diffusion of aluminum R. Sundaresan, D.E. Burk, J.G. Fossum Journal of Applied Physics EngineeringOrganic Solar CellIntragrain DiffusionPhotovoltaic SystemCarrier Lifetime	1984	55
Modeling of the subthreshold characteristics of SOI MOSFETs with floating body M. Matloubian, C.-E.D. Chen, B.-Y. Mao, IEEE Transactions on Electron Devices Device ModelingPositive FeedbackElectrical EngineeringSemiconductor DeviceEngineering	1990	31
Measurement and modeling of the sidewall threshold voltage of mesa-isolated SOI MOSFETs M. Matloubian, R. Sundaresan, Huiling Lü IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringPhysicsHigh Voltage Engineering	1989	30
Analysis of minority-carrier transport in polysilicon devices J.G. Fossum, R. Sundaresan IEEE Transactions on Electron Devices Electrical EngineeringQuasi-neutral GrainEngineeringPhysicsGrain Boundary	1982	25
Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon S.D.S. Malhi, H. Shichijo, S. Banerjee, IEEE Journal of Solid-State Circuits EngineeringVlsi DesignComputer ArchitectureCmos 64KSilicon On Insulator	1985	23

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