S.D.S. Malhi

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

S.D.S. Malhi, H. Shichijo, S. Banerjee et al. · IEEE Transactions on Electron Devices · 1985 · 190 citations

Engineering, Vlsi Design, Computer Architecture +17

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

G. Pollack, W.F. Richardson, S.D.S. Malhi et al. · IEEE Electron Device Letters · 1984 · 84 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Hot-electron degradation of n-channel polysilicon MOSFETs

S. Banerjee, R. Sundaresan, H. Shichijo et al. · IEEE Transactions on Electron Devices · 1988 · 59 citations

Hydrogen Passivation, Electrical Engineering, Grain Boundaries +9

A trench transistor cross-point DRAM cell

W.F. Richardson, D.M. Bordelon, G. Pollack et al. · 1985 · 47 citations

Electrical Engineering, Engineering, Deep Trench +8

A 4-Mbit DRAM with trench-transistor cell

A.H. Shah, C. Wang, R.H. Womack et al. · IEEE Journal of Solid-State Circuits · 1986 · 31 citations

Non-volatile Memory, Electrical Engineering, Scd Modes +11