W.F. Richardson

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

S.D.S. Malhi, H. Shichijo, S. Banerjee et al. · IEEE Transactions on Electron Devices · 1985 · 190 citations

Engineering, Vlsi Design, Computer Architecture +17

A new three-terminal tunnel device

S. Banerjee, W.F. Richardson, Jim Coleman et al. · IEEE Electron Device Letters · 1987 · 145 citations

Device Modeling, Electrical Engineering, Underground Infrastructure +14

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

G. Pollack, W.F. Richardson, S.D.S. Malhi et al. · IEEE Electron Device Letters · 1984 · 84 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

A trench transistor cross-point DRAM cell

W.F. Richardson, D.M. Bordelon, G. Pollack et al. · 1985 · 47 citations

Electrical Engineering, Engineering, Deep Trench +8

Sub-100-nm vertical MOSFET with threshold voltage adjustment

Kiyoshi Mori, W.F. Richardson · IEEE Transactions on Electron Devices · 2002 · 36 citations

Low-power Electronics, Electrical Engineering, Engineering +12