Publication | Closed Access
A new three-terminal tunnel device
145
Citations
3
References
1987
Year
Device ModelingElectrical EngineeringUnderground InfrastructureEngineeringTunneling MicroscopyNanoelectronicsElectronic EngineeringBias Temperature InstabilityApplied PhysicsTunnelingFloating TunnelTrench Transistor CellZener EffectUnderground ConstructionMicroelectronicsTexas InstrumentsSemiconductor Device
A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments' 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.
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