IEEE Electron Device Letters · 1987 · 148 citations · 3 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesTunnelingDirect TunnelingTunnel Device ModelingTunnel JunctionsTunneling BarriersTunneling CurrentTunneling In SemiconductorsTunneling PhenomenaZener Breakdown
A Zener effect has been identified in the trench transistor cell (TTC) which is used in Texas Instruments' 4-Mbit DRAM. This paper discusses a closed-form analytical model for the tunneling current in the TTC. The effect is also verified in a novel planar MOS structure.
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The physics of semiconductor devices
H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations