Zener Breakdown

Zener Breakdown is a quantum mechanical phenomenon in semiconductor physics wherein a strong electric field across a heavily doped p-n junction induces tunneling of electrons from the valence band of the p-region to the conduction band of the n-region, resulting in a sudden increase in reverse current at a well-defined breakdown voltage.

66

Publications

4K

Citations

178

Authors

107

Institutions

Publications per year

2017–2026

3

Variants

Zener Effect

Authors

178

  1. BS
    B. S. Berry

    IBM Research - Thomas J. Watson Research Center, United States

    3 publications · 86 citations

    3

    h-index

  2. ZX
    Zhongmin Xiao

    Nanyang Technological University, Singapore

    3 publications · 62 citations

    3

    h-index

  3. JO
    J. Orehotsky

    Brookhaven National Laboratory, United States

    2 publications · 71 citations

    2

    h-index

  4. GH
    Gregory H. Wannier

    University of Oregon, United States

    2 publications · 71 citations

    2

    h-index

  5. SG
    S. Glutsch

    Friedrich Schiller University Jena, Germany

    2 publications · 104 citations

    2

    h-index

1–5 of 178

Venues

  1. Physical Review Letters

    PRL · 7 publications · 1.2K citations

    7

    h-index

  2. Acta Metallurgica

    6 publications · 193 citations

    6

    h-index

  3. Physical Review B

    PRB · 5 publications · 227 citations

    5

    h-index

  4. Journal of Applied Physics

    3 publications · 337 citations

    3

    h-index

  5. Semiconductor Science and Technology

    2 publications · 40 citations

    2

    h-index

1–5