Tunnel Device Modeling

Tunnel Device Modeling is a specialized device modeling approach within semiconductor physics that characterizes carrier transport through quantum mechanical tunneling phenomena in nanoscale electronic devices.

23

Publications

1.2K

Citations

86

Authors

36

Institutions

Publications per year

2017–2026

3

Authors

86

  1. YY
    Yee‐Chia Yeo

    National University of Singapore, Singapore

    2 publications · 65 citations

    2

    h-index

  2. AB
    Arnab Biswas

    École Polytechnique Fédérale de Lausanne, Switzerland

    2 publications · 28 citations

    2

    h-index

  3. GS
    Ganesh S. Samudra

    National University of Singapore, Singapore

    2 publications · 65 citations

    2

    h-index

  4. AM
    Adrian M. Ionescu

    École Polytechnique Fédérale de Lausanne, Switzerland

    2 publications · 28 citations

    2

    h-index

  5. CS
    Chen Shen

    Technische Universität Darmstadt, Germany

    2 publications · 65 citations

    2

    h-index

1–5 of 86

Venues

  1. Solid-State Electronics

    3 publications · 186 citations

    3

    h-index

  2. IEEE Transactions on Electron Devices

    2 publications · 37 citations

    2

    h-index

  3. The Journal of Chemical Physics

    1 publications · 12 citations

    1

    h-index

  4. Surface Science

    1 publications · 16 citations

    1

    h-index

  5. 1

    h-index

1–5