Tunnel Device Modeling
Tunnel Device Modeling is a specialized device modeling approach within semiconductor physics that characterizes carrier transport through quantum mechanical tunneling phenomena in nanoscale electronic devices.
23
Publications
1.2K
Citations
86
Authors
36
Institutions
Publications per year
2017–2026
3
Parents
23
A new three-terminal tunnel device
S. Banerjee, W.F. Richardson, Jim Coleman et al. · IEEE Electron Device Letters · 1987 · 148 citations
Engineering, Electrical Engineering, Electronic Materials +11
Analytical model for a tunnel field-effect transistor
William G. Vandenberghe, Anne S. Verhulst, G. Groeseneken et al. · 2008 · 101 citations
Engineering, Electrical Engineering, Electronic Materials +16
Model simulation of ultrafine particles inside a road tunnel
Lars Gidhagen, Christer Johansson, J. Ström et al. · Atmospheric Environment · 2003 · 94 citations
1–5 of 23
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36
National University of Singapore
Singapore, Singapore
2 h-index
10 publications
284 citations
École Polytechnique Fédérale de Lausanne
Lausanne, Switzerland
2 h-index
7 publications
96 citations
IBM Research - Zurich
Rüschlikon, Switzerland
1 h-index
1 publications
14 citations

University of Helsinki
Helsinki, Finland
1 h-index
1 publications
94 citations
Genedata (Switzerland)
Basel, Switzerland
1 h-index
1 publications
53 citations
University of Antwerp
Antwerp, Belgium
1 h-index
1 publications
101 citations
National Institute of Technology Raipur
Raipur, India
1 h-index
1 publications
11 citations
Ørsted (Denmark)
Fredericia, Denmark
1 h-index
1 publications
16 citations
1–8 of 36
3 publications · 186 citations
3
h-index
2 publications · 37 citations
2
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1 publications · 12 citations
1
h-index
1 publications · 16 citations
1
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1 publications · 384 citations
1
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1–5