IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1997 · 384 citations · 17 references
EngineeringElectrical EngineeringPhysicsCircuit TheoryMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationElectric CircuitsElectron TransportElectronic Transport ModelingMonte Carlo SimulationCircuit SimulationElectron Transport SimulationField-effect Transistor SimulationMaster Equation ApproachesMaster Equation ModelsTunnel Device ModelingTunnel Device SimulationTunnel Junctions
SIMON is a single electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either with a plain Monte Carlo method or with a combination of the Monte Carlo and master equation approach. A graphic user interface allows the quick and easy design of circuits with single-electron tunnel devices. Furthermore, as an example of the usage of SIMON, we discuss the essential problem of random background charge and present possible solutions.
17