S. Selberherr - Concepedia

Author

S. Selberherr

Also Known As

R. Plasun, S Selberherr, S. SELBERHERR, S. Selberherr, SIEGFRIED SELBERHERR, Selberherr, Selberherr, S., Selberherr, Siegfried, Siegfried SELBERHERR, Siegfried Selberherr

1.2K

Publications

14.8K

Citations

H-Index

238

Concepts

All Affiliations

TU Wien University of Vienna Christian Doppler Laboratory for Thermoelectricity Silvaco (United Kingdom)

About

S. Selberherr is an author at TU Wien specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	45	190	8.9K
2	Natural Sciences	21	38	1.2K
3	Business	2	2	97
4	Education	1	1	16
5	Management	1	1	12

S. Selberherr

215

Publications

9.7K

Citations

H-Index

Page 1

	Year	Citations
Analysis and simulation of semiconductor devices S. Selberherr Mathematics and Computers in Simulation Device ModelingSemiconductor DevicesElectrical EngineeringSemiconductor DeviceEngineering	1985	2.1K
SIMON-A simulator for single-electron tunnel devices and circuits Christoph Wasshuber, Hans Kosina, S. Selberherr IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems Device ModelingQuantum ScienceElectrical EngineeringSimon-a SimulatorRandom Background Charge	1997	383
MINIMOS&#8212;A two-dimensional MOS transistor analyzer S. Selberherr, A. Schütz, H. Pötzl IEEE Transactions on Electron Devices	1980	252
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon E. Ungersboeck, S. Dhar, G. Karlowatz, IEEE Transactions on Electron Devices Shear StrainElectrical EngineeringGeneral StrainEngineeringPhysics	2007	195
MOS device modeling at 77 K S. Selberherr IEEE Transactions on Electron Devices Mos DeviceEngineeringCarrier MobilityPhysical AssumptionsCharge Transport	1989	178
Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices Mihail Nedjalkov, Hans Kosina, S. Selberherr, Physical Review B Quantum DynamicEngineeringSemiconductor DeviceSemiconductorsQuantum Computing	2004	170
Physically based models of electromigration: From Black’s equation to modern TCAD models Roberto Lacerda de Orio, H. Ceric, S. Selberherr Microelectronics Reliability Electrical EngineeringTcad ModelsEngineeringElectromigration TechniquePhysics	2010	145
A temperature dependent model for the saturation velocity in semiconductor materials R. Quay, C. Moglestue, V. Palankovski, Materials Science in Semiconductor Processing SemiconductorsElectrical EngineeringEngineeringPhysicsBias Temperature Instability	2000	134
Simulation of critical IC fabrication processes using advanced physical and numerical methods W. Jüngling, P. Pichler, S. Selberherr, IEEE Transactions on Electron Devices EngineeringMaterial SimulationCritical Ic FabricationComputational MechanicsIon Implantation	1985	134
A CMOS IC for portable EEG acquisition systems Rui Escadas Martins, S. Selberherr, F. Vaz Medical ElectronicsEngineeringAnalog DesignElectroencephalographySocial Sciences	2002	121

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