Concepedia
Statistics
Publications
21
Citations
934
H-Index
13
Active since
1967
Affiliations
TU Wien(Current)
Ludwig Boltzmann Institute for Digital Health and Prevention
Ludwig Boltzmann Institute for Age Research
University of Vienna
General Electric (Austria)
H. Pötzl is an author at TU Wien specializing in applied physics, engineering, and physics.
Top concepts
EngineeringApplied PhysicsPhysicsMicroelectronicsElectrical EngineeringDevice ModelingNanoelectronicsNatural SciencesCondensed Matter PhysicsMaterial Science
Publications per year
1967–1992
MINIMOS—A two-dimensional MOS transistor analyzer
S. Selberherr, A. Schütz, H. Pötzl · IEEE Transactions on Electron Devices · 1980 · 252 citations
Simulation of critical IC fabrication processes using advanced physical and numerical methods
W. Jüngling, P. Pichler, S. Selberherr et al. · IEEE Transactions on Electron Devices · 1985 · 134 citations
Engineering, Material Simulation, Critical Ic Fabrication +22
Generalized Model for the Clustering of As Dopants in Si
E. Guerrero, H. Pötzl, R. Tielert et al. · Journal of The Electrochemical Society · 1982 · 83 citations
Engineering, Equilibrium Saturation Concentration, Silicon On Insulator +16
MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage
Wolf Fïchtner, H. Pötzl · International Journal of Electronics · 1979 · 70 citations
Numerical Analysis, Device Modeling, Electrical Engineering +15
A two-dimensional model of the avalanche effects in MOS transistors
A. Schütz, S. Selberherr, H. Pötzl · Solid-State Electronics · 1982 · 57 citations
Device Modeling, Electrical Engineering, Engineering +8
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