Concepedia

H. Pötzl

HP

21

Publications

934

Citations

13

H-Index

1967

Active since

Affiliations

TU Wien(Current)

Ludwig Boltzmann Institute for Digital Health and Prevention

Ludwig Boltzmann Institute for Age Research

University of Vienna

General Electric (Austria)

H. Pötzl is an author at TU Wien specializing in applied physics, engineering, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsMicroelectronicsElectrical EngineeringDevice ModelingNanoelectronicsNatural SciencesCondensed Matter PhysicsMaterial Science

Publications per year

1967–1992

21

Publications

21

MINIMOS&#8212;A two-dimensional MOS transistor analyzer

S. Selberherr, A. Schütz, H. Pötzl · IEEE Transactions on Electron Devices · 1980 · 252 citations

Simulation of critical IC fabrication processes using advanced physical and numerical methods

W. Jüngling, P. Pichler, S. Selberherr et al. · IEEE Transactions on Electron Devices · 1985 · 134 citations

Engineering, Material Simulation, Critical Ic Fabrication +22

Generalized Model for the Clustering of As Dopants in Si

E. Guerrero, H. Pötzl, R. Tielert et al. · Journal of The Electrochemical Society · 1982 · 83 citations

Engineering, Equilibrium Saturation Concentration, Silicon On Insulator +16

MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage

Wolf Fïchtner, H. Pötzl · International Journal of Electronics · 1979 · 70 citations

Numerical Analysis, Device Modeling, Electrical Engineering +15

A two-dimensional model of the avalanche effects in MOS transistors

A. Schütz, S. Selberherr, H. Pötzl · Solid-State Electronics · 1982 · 57 citations

Device Modeling, Electrical Engineering, Engineering +8

Rows per page

1–5 of 21