Ganesh S. Samudra

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra et al. · Journal of Applied Physics · 2008 · 196 citations

Device Modeling, Electrical Engineering, Engineering +15

Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

Chen Shen, M.-F. Li, C. E. Foo et al. · 2006 · 162 citations

Electrical Engineering, Engineering, Physics +15

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra et al. · Applied Physics Letters · 2007 · 142 citations

Device Modeling, Electrical Engineering, Engineering +10

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Huolin Huang, Yung C. Liang, Ganesh S. Samudra et al. · IEEE Transactions on Power Electronics · 2013 · 120 citations

Surface-trapped Electron Charges, Electron Density, Electrical Engineering +14

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Pengfei Guo, Litao Yang, Yue Yang et al. · IEEE Electron Device Letters · 2009 · 117 citations

Device Modeling, Tensile Strain, Electrical Engineering +13