Ganesh S. Samudra

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra et al. · Journal of Applied Physics · 2008 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

Chen Shen, M.-F. Li, C. E. Foo et al. · 2006 · 162 citations

Engineering, Electrical Engineering, Physics +13

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra et al. · Applied Physics Letters · 2007 · 142 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Huolin Huang, Yung C. Liang, Ganesh S. Samudra et al. · IEEE Transactions on Power Electronics · 2013 · 123 citations

Engineering, Electrical Engineering, Materials Science +17

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Pengfei Guo, Yue Yang, Lu Fan et al. · IEEE Electron Device Letters · 2009 · 117 citations

Engineering, Electrical Engineering, Materials Science +16