Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

Abstract

Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I-V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except for the slow initial measurement. This caused the apparent disagreements among results from different groups using on-the-fly methods, which is resolved in this work by the fast on-the-fly technique