M.-F. Li

N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

S. Zhu, Kevin J. Chen, M.-F. Li et al. · IEEE Electron Device Letters · 2004 · 204 citations

Schottky Barrier Source/drain, Electrical Engineering, Engineering +10

Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

Chen Shen, M.-F. Li, C. E. Foo et al. · 2006 · 162 citations

Electrical Engineering, Engineering, Physics +15

A fast measurement technique of MOSFETI/sub d/-V/sub g/ characteristics

Chen Shen, M.-F. Li, X.P. Wang et al. · IEEE Electron Device Letters · 2005 · 65 citations

Device Modeling, Electrical Engineering, Semiconductor Device +13

Thermally Robust HfN Metal as a Promising Gate Electrode for Advanced MOS Device Applications

H.Y. Yu, M.-F. Li, Dim‐Lee Kwong · IEEE Transactions on Electron Devices · 2004 · 61 citations

Hfn Metal, Engineering, Robust Hfn Metal +17

Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

Jinfeng Kang, H.Y. Yu, Chao Ren et al. · Applied Physics Letters · 2004 · 59 citations

Materials Science, Post Deposition Annealing, Electrical Engineering +13