Grace Huiqi Wang

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra et al. · Journal of Applied Physics · 2008 · 196 citations

Device Modeling, Electrical Engineering, Engineering +15

Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra et al. · Applied Physics Letters · 2007 · 142 citations

Device Modeling, Electrical Engineering, Engineering +10

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Eng-Huat Toh, Grace Huiqi Wang, Lap Chan et al. · Applied Physics Letters · 2007 · 104 citations

Wide-bandgap Semiconductor, Engineering, Gate Edge +17

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Eng-Huat Toh, Grace Huiqi Wang, Lap Chan et al. · Japanese Journal of Applied Physics · 2008 · 104 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11

Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

Eng-Huat Toh, Grace Huiqi Wang, Lap Chan et al. · IEEE Transactions on Electron Devices · 2007 · 43 citations

Wide-bandgap Semiconductor, Engineering, Integrated Circuits +16