Grace Huiqi Wang - Concepedia

Author

Grace Huiqi Wang

National University of Singapore

Also Known As

Grace Huiqi Wang

Publications

830

Citations

H-Index

Concepts

All Affiliations

National University of Singapore Institute of Microelectronics Singapore Science Park Institute of Materials Research and Engineering Agency for Science, Technology and Research

About

Grace Huiqi Wang is an author at National University of Singapore specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	14	762
2	Applied Physics	11	14	762
3	Electrical Engineering	11	13	742
4	Materials Engineering	4	4	111
5	Materials Science	2	2	39

Grace Huiqi Wang

Publications

780

Citations

H-Index

Page 1

	Year	Citations
Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra, Journal of Applied Physics Device ModelingElectrical EngineeringEngineeringTunneling MicroscopyGe Tfet	2008	196
Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra, Applied Physics Letters Device ModelingElectrical EngineeringEngineeringTunneling MicroscopyPhysics	2007	142
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Applied Physics Letters Wide-bandgap SemiconductorEngineeringGate EdgeIntegrated CircuitsSemiconductor Device	2007	104
Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics	2008	104
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringIntegrated CircuitsSemiconductor DeviceIon Implantation	2007	43
I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, IEEE Electron Device Letters Impact-ionization MosWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2006	30
Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering Eng-Huat Toh, Grace Huiqi Wang, Guo‐Qiang Lo, Applied Physics Letters Materials EngineeringTensile StrainElectrical EngineeringEngineeringNanoelectronics	2007	28
A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, IEEE Electron Device Letters Low-power ElectronicsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2008	22
A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor Eng-Huat Toh, Grace Huiqi Wang, Guo‐Qiang Lo, Materials EngineeringRoom TemperatureElectrical EngineeringEngineeringNanoelectronics	2006	21
Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing Grace Huiqi Wang, Eng-Huat Toh, Xincai Wang, Applied Physics Letters Materials ScienceSemiconductorsSemiconductor TechnologyEngineeringCrystalline Defects	2007	20

Page 1