Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Abstract

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source, Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Dennis Sylvester, Chun-Huat Heng, Ganesh S. Samudra, Yee-Chia Yeo