Lap Chan - Concepedia

Author

Lap Chan

National University of Singapore

Also Known As

Lap Chan

Publications

Citations

H-Index

Concepts

All Affiliations

National University of Singapore Nanyang Technological University Institute of Microelectronics Institute of Materials Research and Engineering Singapore Science Park

About

Lap Chan is an author at National University of Singapore specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	26	813
2	Applied Physics	17	25	800
3	Chemical Engineering	3	3	68
4	Chemistry	3	3	83
5	Natural Sciences	2	2	59

Lap Chan

Publications

831

Citations

H-Index

Page 1

	Year	Citations
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Applied Physics Letters Wide-bandgap SemiconductorEngineeringGate EdgeIntegrated CircuitsSemiconductor Device	2007	104
Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringHigh-speed Electronics	2008	104
High-k gate stack on germanium substrate with fluorine incorporation Ruilong Xie, Mingbin Yu, M. Y. Lai, Applied Physics Letters Postgate Cf4-plasma TreatmentElectrical EngineeringEngineeringPhysicsFluorine Incorporation	2008	71
Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation Hoong-Shing Wong, Lap Chan, Ganesh Samudra, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSchottky Barrier HeightEngineering	2007	45
Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts Hoong-Shing Wong, Lap Chan, Ganesh S. Samudra, IEEE Electron Device Letters Materials ScienceElectrical EngineeringSe SegregationEngineeringIon Implantation	2007	45
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringIntegrated CircuitsSemiconductor DeviceIon Implantation	2007	43
Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET Shyue Seng Tan, T. P. Chen, Chew Hoe Ang, Microelectronics Reliability Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringBias Temperature Instability	2004	36
Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation Hoong-Shing Wong, Lap Chan, Ganesh S. Samudra, Applied Physics Letters EngineeringChemistryElectron Schottky BarrierSilicon On InsulatorSemiconductor Device	2008	34
Soft-Lithography-Mediated Chemical Vapor Deposition of Architectured Carbon Nanotube Networks on Elastomeric Polymer Hou T. Ng, Maw Lin Foo, Aiping Fang, Langmuir Materials ScienceChemical EngineeringEngineeringElastomeric PolymerFlexible Electronics	2001	30
I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, IEEE Electron Device Letters Impact-ionization MosWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2006	30

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