Lap Chan

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Eng-Huat Toh, Grace Huiqi Wang, Lap Chan et al. · Applied Physics Letters · 2007 · 104 citations

Wide-bandgap Semiconductor, Engineering, Gate Edge +17

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Eng-Huat Toh, Grace Huiqi Wang, Lap Chan et al. · Japanese Journal of Applied Physics · 2008 · 104 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11

High-k gate stack on germanium substrate with fluorine incorporation

Ruilong Xie, Mingbin Yu, M. Y. Lai et al. · Applied Physics Letters · 2008 · 71 citations

Postgate Cf4-plasma Treatment, Electrical Engineering, Engineering +12

Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation

Hoong-Shing Wong, Lap Chan, Ganesh Samudra et al. · IEEE Electron Device Letters · 2007 · 45 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts

Hoong-Shing Wong, Lap Chan, Ganesh S. Samudra et al. · IEEE Electron Device Letters · 2007 · 45 citations

Materials Science, Electrical Engineering, Se Segregation +13