Ganesh Samudra - Concepedia

Author

Ganesh Samudra

National University of Singapore

Also Known As

G Samudra, G. Samudra, Ganesh C. Samudra, Ganesh Samudra

Publications

713

Citations

H-Index

Concepts

All Affiliations

National University of Singapore Institute of Microelectronics The University of Texas at Austin University of Michigan Agency for Science, Technology and Research

About

Ganesh Samudra is an author at National University of Singapore specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	650
2	Applied Physics	15	18	650
3	Electrical Engineering	14	16	583
4	Materials Engineering	4	4	148
5	Computer Engineering	1	1	31

Ganesh Samudra

Publications

650

Citations

H-Index

Page 1

	Year	Citations
Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-&lt;tex&gt;$kappa$&lt;/tex&gt;Tunneling and Control Oxides: Device Fabrication and Electrical Performance Jianhui Chen, Y.Q. Wang, Won Jong Yoo, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringEmerging Memory TechnologyElectrical PerformanceHfalo High-	2004	100
Fast and slow dynamic NBTI components in p-MOSFET with sion dielectric and their impact on device life-time and circuit application Tianzhi Yang, M.F. Li, Chen Shen, Dynamic Nbti ComponentsElectrical EngineeringEngineeringPhysicsNanoelectronics	2005	61
Tungsten nanocrystals embedded in high-k materials for memory application Subhranu Samanta, Won Jong Yoo, Ganesh Samudra, Applied Physics Letters EngineeringEmerging Memory TechnologySemiconductor NanostructuresSemiconductorsTunneling Microscopy	2005	53
Electrical Characteristics of Memory Devices With a High-$k$$\hbox{HfO}_{2}$ Trapping Layer and Dual $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Tunneling Layer Yingqian Wang, Wan Sik Hwang, Gang Zhang, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringDual Tunneling LayerEmerging Memory TechnologyCharge Transport	2007	49
Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric Tianzhi Yang, Chen Shen, M.F. Li, IEEE Electron Device Letters Electrical EngineeringEngineeringPhysicsNbti MeasurementNanoelectronics	2005	48
Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation Hoong-Shing Wong, Lap Chan, Ganesh Samudra, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSchottky Barrier HeightEngineering	2007	45
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringIntegrated CircuitsSemiconductor DeviceIon Implantation	2007	43
Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs Tony Low, M. F. Li, Ganesh Samudra, IEEE Transactions on Electron Devices EngineeringEnhanced Threshold VoltageSilicon On InsulatorGermanium Utb MosfetsSemiconductor Device	2005	37
Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials Lina Fang, Jisheng Pan, Zhao Rong, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringValence Band Offset	2008	31
Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals Subhranu Samanta, Pawan Kumar Singh, Won Jong Yoo, Materials ScienceNon-volatile MemoryElectrical EngineeringGate LengthEngineering	2006	31

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