Ganesh Samudra

Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-<tex>$kappa$</tex>Tunneling and Control Oxides: Device Fabrication and Electrical Performance

Jianhui Chen, Y.Q. Wang, Won Jong Yoo et al. · IEEE Transactions on Electron Devices · 2004 · 100 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Fast and slow dynamic NBTI components in p-MOSFET with sion dielectric and their impact on device life-time and circuit application

Tianzhi Yang, M.F. Li, Chen Shen et al. · 2005 · 61 citations

Dynamic Nbti Components, Electrical Engineering, Engineering +13

Tungsten nanocrystals embedded in high-k materials for memory application

Subhranu Samanta, Won Jong Yoo, Ganesh Samudra et al. · Applied Physics Letters · 2005 · 53 citations

Engineering, Emerging Memory Technology, Semiconductor Nanostructures +17

Electrical Characteristics of Memory Devices With a High-$k$$\hbox{HfO}_{2}$ Trapping Layer and Dual $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Tunneling Layer

Yingqian Wang, Wan Sik Hwang, Gang Zhang et al. · IEEE Transactions on Electron Devices · 2007 · 49 citations

Non-volatile Memory, Engineering, Dual Tunneling Layer +19

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

Tianzhi Yang, Chen Shen, M.F. Li et al. · IEEE Electron Device Letters · 2005 · 48 citations

Electrical Engineering, Engineering, Physics +12