Subhranu Samanta

Realization of Artificial Neuron Using MXene Bi-Directional Threshold Switching Memristors

Yihao Chen, Yu Wang, Yuhao Luo et al. · IEEE Electron Device Letters · 2019 · 88 citations

Materials Science, Electrical Engineering, Engineering +15

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO₂ Gate Dielectric and Excellent Uniformity

Subhranu Samanta, Umesh Chand, Shengqiang Xu et al. · IEEE Electron Device Letters · 2020 · 87 citations · Full text

Materials Science, Artificial Intelligence, Electrical Engineering +15

Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application

Zerlinda Tan, Subhranu Samanta, Won Jong Yoo et al. · Applied Physics Letters · 2004 · 74 citations

Non-volatile Memory, Mean Diameter, Engineering +21

Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

Debanjan Jana, Subhranu Samanta, S. Maikap et al. · Applied Physics Letters · 2016 · 58 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm

Subhranu Samanta, Kaizhen Han, Chen Sun et al. · 2020 · 54 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13