Concepedia

Author

Umesh Chand

National Yang Ming Chiao Tung UniversityORCID

Also Known As

Chand, Umesh, U. Chand, Umesh Chand

74

Publications

2.2K

Citations

20

H-Index

43

Concepts

All Affiliations

National Yang Ming Chiao Tung UniversityNational University of SingaporeBahauddin Zakariya UniversityNanyang Technological UniversityUnited Microelectronics (Taiwan)
UC

About

Umesh Chand is an author at National Yang Ming Chiao Tung University specializing in engineering, applied physics, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

18

23

1.2K

2

Applied Physics

17

22

1.2K

3

Computer Engineering

3

3

143

4

Natural Sciences

1

1

33

5

Chemical Engineering

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33

Umesh Chand

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27

Publications

2.2K

Citations

20

H-Index

YearCitations

Overview of emerging nonvolatile memory technologies

Jagan Singh Meena, Simon M. Sze, Umesh Chand,

Nanoscale Research Letters

2014

750

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Maheswari Sivan, Yida Li, Hasita Veluri,

Nature Communications

2019

187

Metal oxide resistive switching memory: Materials, properties and switching mechanisms

Dayanand Kumar, Rakesh Aluguri, Umesh Chand,

Ceramics International

2017

170

Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing

Muhammad Ismail, Umesh Chand, Chandreswar Mahata,

Journal of Material Science and Technology

2021

120

Forming-free bipolar resistive switching in nonstoichiometric ceria films

Muhammad Ismail, Chun-Yang Huang, Debashis Panda,

Nanoscale Research Letters

2014

103

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO<sub>2</sub> Gate Dielectric and Excellent Uniformity

Subhranu Samanta, Umesh Chand, Shengqiang Xu,

IEEE Electron Device Letters

2020

87

Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory

Umesh Chand, Chun-Yang Huang, Jheng-Hong Jieng,

Applied Physics Letters

2015

79

Mechanism of Nonlinear Switching in HfO<sub>2</sub>-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Umesh Chand, Kuan-Chang Huang, Chun-Yang Huang,

IEEE Transactions on Electron Devices

2015

76

Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer

Dayanand Kumar, Rakesh Aluguri, Umesh Chand,

Applied Physics Letters

2017

73

High-Performance TiN/Al<sub>2</sub>O<sub>3</sub>/ZnO/Al<sub>2</sub>O<sub>3</sub>/TiN Flexible RRAM Device With High Bending Condition

Dayanand Kumar, Umesh Chand, Wen Siang Lew,

IEEE Transactions on Electron Devices

2020

65

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