Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Abstract

The device physics and guiding principles for the design of the double-gate tunneling field-effect transistor with silicon-germanium (SiGe) heterojunction source are discussed. Two dimensional device simulations were employed to study the influence of the position of the SiGe∕Si heterojunction on band-to-band tunneling and device performance. It is established that band-to-band tunneling occurs at a distance of ∼4nm from the gate edge in the source region. In order for the narrower bandgap of SiGe to play a dominant role, the overlap between the SiGe region and the gate should be such that the whole tunneling path of the electrons is located in SiGe. To harness the maximum benefits of the high band-to-band tunneling rate in SiGe, an overlap of ∼2nm between the SiGe region and the gate would be required.