Ruilong Xie - Concepedia

Author

Ruilong Xie

National University of Singapore

Also Known As

Ruilong Xie

Publications

640

Citations

H-Index

Concepts

All Affiliations

National University of Singapore Institute of Microelectronics GlobalFoundries (United States)Agency for Science, Technology and Research

About

Ruilong Xie is an author at National University of Singapore specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	554
2	Applied Physics	8	8	435
3	Natural Sciences	1	1	129
4	Chemical Engineering	1	1	75
5	Chemistry	1	1	129

Ruilong Xie

Publications

581

Citations

H-Index

Page 1

	Year	Citations
Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond Chi‐Chun Liu, Elliott Franke, Yann Mignot, Nature Electronics Materials ScienceBlock Co-polymersEngineeringNanomaterialsNanotechnology	2018	129
Scaling Challenges for Advanced CMOS Devices Ajey P. Jacob, Ruilong Xie, Min Gyu Sung, International Journal of High Speed Electronics and Systems Electrical EngineeringEngineeringVlsi DesignHigh-speed ElectronicsThree-dimensional Heterogeneous Integration	2017	119
Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric Ruilong Xie, Chunxiang Zhu IEEE Electron Device Letters EngineeringSemiconductor DeviceSemiconductorsChemical EngineeringS Passivation	2007	75
High-k gate stack on germanium substrate with fluorine incorporation Ruilong Xie, Mingbin Yu, M. Y. Lai, Applied Physics Letters Postgate Cf4-plasma TreatmentElectrical EngineeringEngineeringPhysicsFluorine Incorporation	2008	71
Interface-Engineered High-Mobility High-$k$/Ge pMOSFETs With 1-nm Equivalent Oxide Thickness Ruilong Xie, Thanh Hoa Phung, Wei He, IEEE Transactions on Electron Devices /Ge PmosfetsElectrical EngineeringSemiconductor DeviceEngineeringInterface States	2009	47
Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation Ruilong Xie, Wei He, Mingbin Yu, Applied Physics Letters EngineeringGeo2 Surface PassivationSemiconductor DeviceSemiconductorsIi-vi Semiconductor	2008	46
High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization Ruilong Xie, Thanh Hoa Phung, Wei He, EngineeringGe PmosfetsPower ElectronicsSemiconductor DeviceElectromagnetic Compatibility	2008	39
Effective Surface Passivation by Novel $\hbox{SiH}_{4}$ –$\hbox{NH}_{3}$ Treatment and BTI Characteristics on Interface-Engineered High-Mobility $\hbox{HfO}_{2}$-Gated Ge pMOSFETs Ruilong Xie, Thanh Hoa Phung, Mingbin Yu, IEEE Transactions on Electron Devices Oxide HeterostructuresSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2010	18
Backside Power Distribution for Nanosheet Technologies Beyond 2nm Ruilong Xie, Wonhyuk Hong, Chen Zhang,	2024	16
CMP Challenges for Advanced Technology Nodes John H. Zhang, Haigou Huang, Andrew Greene, MRS Advances	2017	11

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