Hoong-Shing Wong

Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation

Hoong-Shing Wong, Lap Chan, Ganesh Samudra et al. · IEEE Electron Device Letters · 2007 · 45 citations

Engineering, Materials Engineering, Materials Science +17

Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts

Hoong-Shing Wong, Lap Chan, Ganesh S. Samudra et al. · IEEE Electron Device Letters · 2007 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation

Hoong-Shing Wong, Lap Chan, Ganesh S. Samudra et al. · Applied Physics Letters · 2008 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub-35nm Gate Length

Rinus T. P. Lee, Tsung-Yang Liow, Kian-Ming Tan et al. · 2006 · 21 citations

Engineering, Electrical Engineering, Materials Science +14

Novel Nickel Silicide Contact Technology Using Selenium Segregation for SOI N-FETs With Silicon–Carbon Source/Drain Stressors

Hoong-Shing Wong, Fangyue Liu, Kah‐Wee Ang et al. · IEEE Electron Device Letters · 2008 · 16 citations

Engineering, Electrical Engineering, Materials Science +17