Kian-Ming Tan

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

R.T.-P. Lee, A.E.-J. Lim, Kian-Ming Tan et al. · IEEE Electron Device Letters · 2009 · 96 citations

Materials Science, Semiconductors, Electrical Engineering +15

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon–Carbon Source/Drain

Rinus T. P. Lee, Litao Yang, Tsung-Yang Liow et al. · IEEE Electron Device Letters · 2008 · 46 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Rinus T. P. Lee, Andy Eu-Jin Lim, Kian-Ming Tan et al. · IEEE Electron Device Letters · 2007 · 43 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Strained n-Channel FinFETs Featuring <i>In Situ</i> Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Tsung-Yang Liow, Kian-Ming Tan, Doran Weeks et al. · IEEE Transactions on Electron Devices · 2008 · 36 citations

Engineering, Chemical Analysis, Solid-state Chemistry +18

Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors

Kian-Ming Tan, Tsung-Yang Liow, Rinus T. P. Lee et al. · IEEE Electron Device Letters · 2007 · 30 citations

P-channel Finfets, Semiconductor Technology, Electrical Engineering +11