Kian-Ming Tan - Concepedia

Author

Kian-Ming Tan

National University of Singapore

Also Known As

K.-M. Tan, Kian-Ming Tan

Publications

439

Citations

H-Index

Concepts

All Affiliations

National University of Singapore Institute of Microelectronics Institute of Materials Research and Engineering Data Storage Institute Agency for Science, Technology and Research

About

Kian-Ming Tan is an author at National University of Singapore specializing in applied physics, microelectronics, and nanoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	15	407
2	Applied Physics	12	14	377
3	Electrical Engineering	12	15	407
4	Chemical Engineering	1	1	36
5	Chemistry	1	1	36

Kian-Ming Tan

Publications

407

Citations

H-Index

Page 1

	Year	Citations
Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance R.T.-P. Lee, A.E.-J. Lim, Kian-Ming Tan, IEEE Electron Device Letters Materials ScienceSemiconductorsElectrical EngineeringDipole FormationEngineering	2009	96
Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon–Carbon Source/Drain Rinus T. P. Lee, Litao Yang, Tsung-Yang Liow, IEEE Electron Device Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringCarbon Contact TechnologyContact Technology	2008	46
N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide Rinus T. P. Lee, Andy Eu-Jin Lim, Kian-Ming Tan, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSub XmlnsEngineering	2007	43
Strained n-Channel FinFETs Featuring <i>In Situ</i> Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content Tsung-Yang Liow, Kian-Ming Tan, Doran Weeks, IEEE Transactions on Electron Devices EngineeringChemical AnalysisSolid-state ChemistryHigh Carbon ContentChemistry	2008	36
Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors Kian-Ming Tan, Tsung-Yang Liow, Rinus T. P. Lee, IEEE Electron Device Letters P-channel FinfetsSemiconductor TechnologyElectrical EngineeringSilicon–germanium SourceEngineering	2007	30
N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer Tsung-Yang Liow, Kian-Ming Tan, Rinus T. P. Lee, IEEE Electron Device Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	2007	22
Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub-35nm Gate Length Rinus T. P. Lee, Tsung-Yang Liow, Kian-Ming Tan, Materials EngineeringElectrical EngineeringEngineeringNisi-alloy CandidatesNanoelectronics	2006	21
Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors Tsung-Yang Liow, Kian-Ming Tan, Rinus T. P. Lee, IEEE Electron Device Letters Electrical EngineeringSic SourceEngineeringNanoelectronicsApplied Physics	2008	20
A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET Kian-Ming Tan, Ming Zhu, Weiwei Fang, IEEE Electron Device Letters Materials EngineeringDiamond-like CarbonElectrical EngineeringEngineeringNanoelectronics	2008	17
Drive-Current Enhancement in FinFETs Using Gate-Induced Stress Kian-Ming Tan, Tsung-Yang Liow, R.T.P. Lee, IEEE Electron Device Letters Materials EngineeringElectrical EngineeringSi ChannelEngineeringSi Channel Region	2006	16

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