Doran Weeks

Strained n-Channel FinFETs Featuring <i>In Situ</i> Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Tsung-Yang Liow, Kian-Ming Tan, Doran Weeks et al. · IEEE Transactions on Electron Devices · 2008 · 36 citations

Engineering, Electrical Engineering, Materials Science +12

Strain Enhanced nMOS Using <i>In Situ</i> Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process

Peter Verheyen, Vladimir Machkaoutsan, Matthias Bauer et al. · IEEE Electron Device Letters · 2008 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices

Matthias Bauer, Doran Weeks, Yangting Zhang et al. · ECS Transactions · 2006 · 22 citations

Engineering, Materials Engineering, Materials Science +17

Ion implanted optical waveguides in LiNbO ₃

G.D.H. King, M. C. Bone, B.L. Weiss et al. · Electronics Letters · 1981 · 16 citations

Engineering, Materials Engineering, Materials Science +16

Silicon–Carbon Stressors With High Substitutional Carbon Concentration and <i>In Situ</i> Doping Formed in Source/Drain Extensions of n-Channel Transistors

Hoong-Shing Wong, Kah‐Wee Ang, Lap Chan et al. · IEEE Electron Device Letters · 2008 · 15 citations

Engineering, Electrical Engineering, Materials Science +17