Vladimir Machkaoutsan

Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal

Hans Mertens, R. Ritzenthaler, Hiroaki Arimura et al. · 2015 · 53 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices

Matthias Bauer, Vladimir Machkaoutsan, C. Arena · Semiconductor Science and Technology · 2006 · 53 citations

Engineering, Source Drain Areas, Optoelectronic Devices +17

Strain Enhanced nMOS Using <i>In Situ</i> Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process

Peter Verheyen, Vladimir Machkaoutsan, Matthias Bauer et al. · IEEE Electron Device Letters · 2008 · 30 citations

Materials Science, Semiconductors, Electrical Engineering +15

Improved thermal stability of Ni-silicides on Si:C epitaxial layers

Vladimir Machkaoutsan, S. Mertens, Matthias Bauer et al. · Microelectronic Engineering · 2007 · 27 citations

Epitaxial Growth, Thermal Stability, Applied Physics +1

Holistic technology optimization and key enablers for 7nm mobile SoC

S. C. Song, Jun Xu, Niladri Narayan Mojumder et al. · 2015 · 24 citations

Engineering, Vlsi Design, Computer Architecture +19