Improved thermal stability of Ni-silicides on Si:C epitaxial layers

Ni- and Co-based silicides for advanced CMOS applications

J. A. Kittl, A. Lauwers, O. Chamirian et al. · Microelectronic Engineering · 2003 · 114 citations

Engineering, Nanoelectronics, Applied Physics +6

Ni based silicides for 45nm CMOS and beyond

A. Lauwers, J. A. Kittl, M.J.H. van Dal et al. · Materials Science and Engineering B · 2004 · 65 citations

Engineering, Physics, Nanoelectronics +5

Improvement in NiSi/Si contact properties with C-implantation

Osamu Nakatsuka, Kazuya Okubo, Akira Sakai et al. · Microelectronic Engineering · 2005 · 60 citations

Materials Engineering, Ion Implantation, Engineering +7

Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices

Matthias Bauer, Doran Weeks, Yangting Zhang et al. · ECS Transactions · 2006 · 22 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Study of Ni-Silicide Contacts to Si:C Source/Drain.

S. Mertens, Yonah Cho, Faran Nouri et al. · ECS Transactions · 2006 · 11 citations

Materials Science, Tensile Strain, Electrical Engineering +12